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NTZD3155CT2G 参数 Datasheet PDF下载

NTZD3155CT2G图片预览
型号: NTZD3155CT2G
PDF下载: 下载PDF文件 查看货源
内容描述: 小信号MOSFET互补20 V 540毫安/ -430毫安,具有ESD保护, SOT- 563封装。 [Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package.]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 8 页 / 112 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NTZD3155C
N-CHANNEL TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
V
GS
, GATE-T O-SOURCE VOLTAGE (V)
200
5
4
20
16
T
J
= 25°C
Q
T
V
DS
V
GS
150
3
12
100
V
GS
= 0 V
C
ISS
2
8
Q
GS
1
Q
GD
I
D
= 0.54 A
T
J
= 25°C
4
50
V
DS
= 0 V
C
OSS
0
0
V
DS
DRAIN-T O-SOURCE VOLTAGE (V)
5
10
15
20
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
1.6
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
I
S
, SOURCE CURRENT (A)
V
DS
= 10 V
I
D
= 0.2 A
V
GS
= 4.5 V
t, TIME (ns)
t
d(OFF)
10
t
r
t
f
t
d(ON)
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2
V
GS
= 0 V
T
J
= 25°C
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
1
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
http://onsemi.com
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)