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NTZD3155CT2G 参数 Datasheet PDF下载

NTZD3155CT2G图片预览
型号: NTZD3155CT2G
PDF下载: 下载PDF文件 查看货源
内容描述: 小信号MOSFET互补20 V 540毫安/ -430毫安,具有ESD保护, SOT- 563封装。 [Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package.]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 8 页 / 112 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NTZD3155C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
P
V
GS
= -4.5 V, V
DS
= 10 V; I
D
= -380 mA
N
V
GS
= 4.5 V, V
DS
= -10 V; I
D
= 540 mA
1.5
0.1
0.2
0.35
1.7
0.1
0.3
0.4
2.5
nC
2.5
SWITCHING CHARACTERISTICS (V
GS
= V)
(Note 4)
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time
Fall Time
Drain-Source Diode Characteristics
Forward Diode Voltage
V
SD
N
P
Reverse Recovery Time
t
RR
N
P
V
GS
= 0 V, T
J
= 25°C
V
GS
= 0 V,
dIS/dt = 100 A/ms
I
S
= 350 mA
I
S
= -350 mA
I
S
= 350 mA
I
S
= -350 mA
0.7
-0.8
6.5
13
ns
1.2
-1.2
V
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
P
V
GS
= -4.5 V, V
DD
= 10 V, I
D
= -215 mA,
R
G
= 10
W
N
V
GS
= 4.5 V, V
DD
= -10 V, I
D
= 540 mA,
R
G
= 10
W
6.0
4.0
16
8.0
10
12
35
19
ns
4. Switching characteristics are independent of operating junction temperatures
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