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NTZD3155CT2G 参数 Datasheet PDF下载

NTZD3155CT2G图片预览
型号: NTZD3155CT2G
PDF下载: 下载PDF文件 查看货源
内容描述: 小信号MOSFET互补20 V 540毫安/ -430毫安,具有ESD保护, SOT- 563封装。 [Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package.]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 8 页 / 112 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NTZD3155C
N-CHANNEL TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
1.2
5.5 V
1.0
I
D
, DRAIN CURRENT (A)
0.8
0.6
V
GS
= 1.4 V
0.4
0.2
0
0
V
GS
= 1.2 V
V
GS
= 1.0 V
1
2
3
4
5
6
7
8
9
10
1.8 V
V
GS
= 1.6 V
V
GS
= 2.0 V to 2.2 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
T
J
= 25°C
T
J
= 100°C
V
DS
w
10 V
T
J
= -55°C
1.5
2.0
2.5
3.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
V
GS
, GATE-T O-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
R
DS(on)
, DRAIN-TO-SOURCE CURRENT
RESISTANCE (W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1
3
4
5
V
GS
, GATE-T O-SOURCE VOLTAGE (V)
2
6
Figure 2. Transfer Characteristics
0.9
R
DS(on)
, DRAIN-TO-SOURCE
RESISTANCE (W)
I
D
= 0.54 A
T
J
= 25°C
T
J
= 25°C
0.8
V
GS
= 1.8 V
0.7
0.6
0.5
0.4
0.3
0.2
V
GS
= 2.5 V
V
GS
= 4.5 V
0.4
0.6
0.8
I
D
, DRAIN CURRENT (A)
1
1.2
Figure 3. On-Resistance versus
Gate-to-Source Voltage
2
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
1000
R
DS(on)
, DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
I
DSS
, LEAKAGE (nA)
I
D
= 0.54 A
V
GS
= 4.5 V
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 100°C
10
-25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
versus Voltage
http://onsemi.com
4