NTZD3155C
Thermal Resistance Ratings
Parameter
Junction-to-Ambient – Steady State (Note 2)
Junction-to-Ambient – t = 5 s (Note 2)
Symbol
R
qJA
Max
500
447
Unit
°C/W
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
N
P
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V(
BR)DSS
/T
J
I
DSS
N
P
N
P
Gate-to-Source Leakage Current
I
GSS
P
N
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(TH)
N
P
Gate Threshold
Temperature Coefficient
Drain-to-Source On Resistance
V
GS(TH)
/T
J
R
DS(on)
N
P
N
P
N
P
Forward Transconductance
g
FS
N
P
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
C
ISS
C
OSS
C
RSS
P
f = 1 MHz, V
GS
= 0 V
V
DS
= -16 V
N
f = 1 MHz, V
GS
= 0 V
V
DS
= 16 V
80
13
10
105
15
10
150
25
20
175
30
20
pF
V
GS
= 4.5 V, I
D
= 540 mA
V
GS
= -4.5V , I
D
= -430 mA
V
GS
= 2.5 V, I
D
= 500 mA
V
GS
= -2.5V , I
D
= -300 mA
V
GS
= 1.8 V, I
D
= 350 mA
V
GS
= -1.8V , I
D
= -150 mA
V
DS
= 10 V, I
D
= 540 mA
V
DS
= -10 V, I
D
= -430 mA
V
GS
= V
DS
I
D
= 250
mA
I
D
= -250
mA
0.45
-0.45
-1.9
0.4
0.5
0.5
0.6
0.7
1.0
1.0
1.0
S
0.55
0.9
0.7
1.2
0.9
2.0
W
1.0
-1.0
-mV/
°C
V
V
GS
= 0 V, V
DS
= 16 V
V
GS
= 0 V, V
DS
= -16 V
V
GS
= 0 V, V
DS
= 16 V
V
GS
= 0 V, V
DS
= - 16V
V
DS
= 0 V, V
GS
=
±4.5
V
T
J
= 125°C
T
J
= 25°C
V
GS
= 0 V
I
D
= 250
mA
I
D
= -250
mA
20
-20
18
1.0
-1.0
2.0
-5.0
$2.0
$5.0
mA
mA
mV/°C
mA
V
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
3. Pulse Test: pulse width
v300
ms,
duty cycle
v2%
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