Typical Characteristics T = 25°C unless otherwise noted
C
1.2
1.0
0.8
0.6
0.4
1.10
1.05
1.00
0.95
0.90
I
= 250µA
V
= V , I = 250µA
DS D
D
GS
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
5000
10
V
= 15V
DD
C
= C + C
GS GD
ISS
8
6
4
2
0
1000
C
C
+ C
OSS
DS GD
C
V
= C
GD
RSS
WAVEFORMS IN
DESCENDING ORDER:
I
I
= 35A
= 5A
D
D
= 0V, f = 1MHz
GS
100
0.1
0
5
10
15
20
25
30
30
1
10
V
, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
DS
g
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2008 Fairchild Semiconductor Corporation
FDD8876 / FDU8876 Rev. 1.2
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