Typical Characteristics T = 25°C unless otherwise noted
C
1000
100
10
500
If R = 0
= (L)(I )/(1.3*RATED BV
t
- V
DD
)
AV
AS
DSS
If R ≠ 0
= (L/R)ln[(I *R)/(1.3*RATED BV
10µs
t
AV
- V ) +1]
DD
AS
DSS
100
100µs
o
STARTING T = 25 C
J
OPERATION IN THIS
AREA MAY BE
10
LIMITED BY r
DS(ON)
1ms
o
1
STARTING T = 150 C
J
10ms
DC
SINGLE PULSE
T
= MAX RATED
J
o
T
= 25 C
C
0.1
1
0.01
60
1
10
, DRAIN TO SOURCE VOLTAGE (V)
0.1
t , TIME IN AVALANCHE (ms)
AV
1
10
V
DS
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
100
100
PULSE DURATION = 80µs
V
= 5V
GS
DUTY CYCLE = 0.5% MAX
V
= 15V
DD
80
60
40
20
0
80
60
40
20
0
V
= 10V
GS
V
= 4V
= 3V
GS
o
T
= 25 C
J
V
GS
o
T
= 25 C
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
o
T
= 175 C
T
= -55 C
J
J
0
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
GS
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
20
15
10
5
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
= 35A
D
1.4
1.2
1.0
0.8
0.6
I
= 1A
D
V
= 10V, I = 35A
D
GS
2
4
6
8
10
-80
-40
0
40
80
120
160
200
o
V
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
GS
J
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2008 Fairchild Semiconductor Corporation
FDD8876 / FDU8876 Rev. 1.2
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