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FDD8876 参数 Datasheet PDF下载

FDD8876图片预览
型号: FDD8876
PDF下载: 下载PDF文件 查看货源
内容描述: [N 沟道,PowerTrench® MOSFET,30V,73A,8.2mΩ]
分类和应用: 开关晶体管
文件页数/大小: 13 页 / 533 K
品牌: ONSEMI [ ONSEMI ]
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Package Marking and Ordering Information  
Device Marking  
Device  
FDD8876  
FDU8876  
Package  
TO-252AA  
TO-251AA  
Reel Size  
13”  
Tape Width  
16mm  
Quantity  
2500 units  
75 units  
FDD8876  
FDU8876  
Tube  
N/A  
Electrical Characteristics T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
B
Drain to Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate to Source Leakage Current  
I
= 250µA, V = 0V  
30  
-
-
-
-
-
-
V
VDSS  
D
GS  
V
V
V
= 24V  
= 0V  
1
DS  
GS  
GS  
I
I
µA  
nA  
DSS  
o
T
= 150 C  
-
250  
±100  
C
= ±20V  
-
GSS  
On Characteristics  
V
Gate to Source Threshold Voltage  
V
= V , I = 250µA  
1.2  
-
2.5  
V
GS(TH)  
GS  
DS  
D
I
I
I
= 35A, V = 10V  
-
-
0.0066 0.0082  
0.008 0.010  
D
D
D
GS  
= 35A, V = 4.5V  
GS  
r
Drain to Source On Resistance  
DS(ON)  
= 35A, V = 10V,  
GS  
-
0.011 0.013  
o
T = 175 C  
J
Dynamic Characteristics  
C
C
C
R
Input Capacitance  
-
-
-
-
-
-
-
-
-
-
1700  
330  
200  
2.2  
34  
-
-
pF  
pF  
pF  
ISS  
OSS  
RSS  
G
V
= 15V, V = 0V,  
GS  
DS  
Output Capacitance  
f = 1MHz  
Reverse Transfer Capacitance  
Gate Resistance  
-
V
V
V
V
= 0.5V, f = 1MHz  
= 0V to 10V  
-
GS  
GS  
GS  
GS  
Q
Q
Q
Q
Q
Q
Total Gate Charge at 10V  
Total Gate Charge at 5V  
Threshold Gate Charge  
Gate to Source Gate Charge  
Gate Charge Threshold to Plateau  
Gate to Drain “Miller” Charge  
47  
26  
1.9  
-
nC  
nC  
nC  
nC  
nC  
nC  
g(TOT)  
g(5)  
g(TH)  
gs  
= 0V to 5V  
18  
V
= 15V  
DD  
= 35A  
= 0V to 1V  
1.4  
4.2  
2.8  
8.0  
I
D
I = 1.0mA  
g
-
gs2  
-
gd  
Switching Characteristics (V = 10V)  
GS  
t
t
t
t
t
t
Turn-On Time  
Turn-On Delay Time  
Rise Time  
-
-
-
-
-
-
-
149  
ns  
ns  
ns  
ns  
ns  
ns  
ON  
8
-
d(ON)  
91  
44  
37  
-
-
V
V
= 15V, I = 35A  
r
DD  
GS  
D
= 10V, R = 10Ω  
Turn-Off Delay Time  
Fall Time  
-
-
GS  
d(OFF)  
f
Turn-Off Time  
122  
OFF  
Drain-Source Diode Characteristics  
I
I
I
I
= 35A  
= 15A  
-
-
-
-
-
-
-
-
1.25  
1.0  
26  
V
V
SD  
SD  
SD  
SD  
V
Source to Drain Diode Voltage  
SD  
t
Reverse Recovery Time  
= 35A, dI /dt = 100A/µs  
ns  
nC  
rr  
SD  
Q
Reverse Recovered Charge  
= 35A, dI /dt = 100A/µs  
12  
RR  
SD  
Notes:  
1: Package current limitation is 35A.  
2: Starting T = 25°C, L = 0.24mH, I = 28A, V = 27V, V = 10V.  
J
AS  
DD  
GS  
3
©2008 Fairchild Semiconductor Corporation  
FDD8876 / FDU8876 Rev. 1.2  
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