March 2015
FDD8876 / FDU8876
®
N-Channel PowerTrench MOSFET
30V, 73A, 8.2mΩ
General Description
Features
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
•
•
•
r
= 8.2mΩ, V = 10V, I = 35A
GS D
DS(ON)
r
= 10mΩ, V = 4.5V, I = 35A
DS(ON)
GS
D
High performance trench technology for extremely low
r
r
and fast switching speed.
DS(ON)
DS(ON)
•
•
Low gate charge
Applications
High power and current handling capability
•
DC/DC converters
• RoHS Compliant
D
S
D
G
S
G
I-PAK
(TO-251AA)
D-PAK
TO-252
(TO-252)
G D S
MOSFET Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
30
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
V
V
DSS
GS
±20
Drain Current
o
73
66
A
A
Continuous (T = 25 C, V = 10V) (Note 1)
C
GS
o
I
Continuous (T = 25 C, V = 4.5V) (Note 1)
C GS
D
o
o
Continuous (T
= 25 C, V = 10V, with R = 52 C/W)
θJA
15
A
amb
GS
Pulsed
Figure 4
95
A
E
P
Single Pulse Avalanche Energy (Note 2)
Power dissipation
mJ
W
AS
70
D
o
o
Derate above 25 C
0.47
W/ C
o
T , T
Operating and Storage Temperature
-55 to 175
C
J
STG
Thermal Characteristics
o
R
R
R
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
2.14
100
52
C/W
θJC
θJA
θJA
o
C/W
2
o
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
C/W
©2008 Fairchild Semiconductor Corporation
FDD8876 / FDU8876 Rev.1.2
ONSEMI [ ONSEMI ]
