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FDD8876 参数 Datasheet PDF下载

FDD8876图片预览
型号: FDD8876
PDF下载: 下载PDF文件 查看货源
内容描述: [N 沟道,PowerTrench® MOSFET,30V,73A,8.2mΩ]
分类和应用: 开关晶体管
文件页数/大小: 13 页 / 533 K
品牌: ONSEMI [ ONSEMI ]
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Typical Characteristics T = 25°C unless otherwise noted  
C
1.2  
80  
CURRENT LIMITED  
BY PACKAGE  
1.0  
60  
0.8  
V
= 10V  
GS  
0.6  
40  
0.4  
V
= 4.5V  
GS  
20  
0.2  
0
0
0
25  
50  
75  
100  
150  
175  
125  
o
25  
50  
75  
100  
125  
o
150  
175  
T
, CASE TEMPERATURE ( C)  
C
T
, CASE TEMPERATURE ( C)  
C
Figure 1. Normalized Power Dissipation vs Case  
Temperature  
Figure 2. Maximum Continuous Drain Current vs  
Case Temperature  
2
DUTY CYCLE - DESCENDING ORDER  
0.5  
0.2  
1
0.1  
0.05  
0.02  
0.01  
P
DM  
0.1  
t
1
t
2
NOTES:  
DUTY FACTOR: D = t /t  
1
2
SINGLE PULSE  
0.01  
PEAK T = P  
x Z  
x R  
+ T  
θJC C  
J
DM  
θJC  
-5  
-4  
-3  
-2  
-1  
0
1
10  
10  
10  
10  
t, RECTANGULAR PULSE DURATION (s)  
10  
10  
10  
Figure 3. Normalized Maximum Transient Thermal Impedance  
1000  
o
T
= 25 C  
C
TRANSCONDUCTANCE  
MAY LIMIT CURRENT  
IN THIS REGION  
FOR TEMPERATURES  
o
ABOVE 25 C DERATE PEAK  
CURRENT AS FOLLOWS:  
175 - T  
150  
C
I = I  
25  
V
= 4.5V  
GS  
100  
30  
-5  
-4  
-3  
-2  
-1  
0
1
10  
10  
10  
10  
t, PULSE WIDTH (s)  
10  
10  
10  
Figure 4. Peak Current Capability  
©2008 Fairchild Semiconductor Corporation  
FDD8876 / FDU8876 Rev. 1.2  
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