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FDB3632-F085 参数 Datasheet PDF下载

FDB3632-F085图片预览
型号: FDB3632-F085
PDF下载: 下载PDF文件 查看货源
内容描述: [N 沟道,PowerTrench® MOSFET,100V,80A,9mΩ]
分类和应用: PC开关晶体管
文件页数/大小: 12 页 / 1368 K
品牌: ONSEMI [ ONSEMI ]
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Typical Characteristics TA = 25°C unless otherwise noted  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
1.2  
1.1  
1.0  
0.9  
V
= V , I = 250µA  
DS D  
I
= 250µA  
GS  
D
-80  
-40  
0
40  
80  
120  
160  
200  
-80  
-40  
0
40  
80  
120  
160  
200  
o
o
T , JUNCTION TEMPERATURE ( C)  
T , JUNCTION TEMPERATURE ( C)  
J
J
Figure 11. Normalized Gate Threshold Voltage vs  
Junction Temperature  
Figure 12. Normalized Drain to Source  
Breakdown Voltage vs Junction Temperature  
10000  
10  
V
= 50V  
DD  
C
= C + C  
GS GD  
ISS  
8
6
4
2
0
C
C + C  
GD  
OSS  
DS  
1000  
C
= C  
RSS  
GD  
WAVEFORMS IN  
DESCENDING ORDER:  
I
I
= 80A  
= 40A  
D
D
V
= 0V, f = 1MHz  
1
GS  
100  
0.1  
10  
100  
0
20  
40  
60  
80  
100  
V
, DRAIN TO SOURCE VOLTAGE (V)  
Q , GATE CHARGE (nC)  
DS  
g
Figure 13. Capacitance vs Drain to Source  
Voltage  
Figure 14. Gate Charge Waveforms for Constant  
Gate Currents  
www.onsemi.com  
5
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