FDB3632-F085
N-Channel PowerTrench® MOSFET
100V, 80A, 9mΩ
Applications
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DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Features
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rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A
Qg(tot) = 84nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Electronic Valve Train Systems
RoHS Compliant
D
DRAIN
(FLANGE)
GATE
G
SOURCE
TO-263AB
FDB SERIES
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
Parameter
Ratings
100
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
V
V
±20
Continuous (TC < 111oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
80
12
A
A
ID
Figure 4
338
A
EAS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
mJ
W
W/oC
oC
310
PD
2.07
TJ, TSTG
Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220, TO-263, TO-262
0.48
62
oC/W
oC/W
oC/W
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
43
Publication Order Number:
©2012 Semiconductor Components Industries, LLC.
August-2017, Rev. 3
FDB3632-F085/D
ONSEMI [ ONSEMI ]
