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FDB3632-F085 参数 Datasheet PDF下载

FDB3632-F085图片预览
型号: FDB3632-F085
PDF下载: 下载PDF文件 查看货源
内容描述: [N 沟道,PowerTrench® MOSFET,100V,80A,9mΩ]
分类和应用: PC开关晶体管
文件页数/大小: 12 页 / 1368 K
品牌: ONSEMI [ ONSEMI ]
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Thermal Resistance vs. Mounting Pad Area  
The maximum rated junction temperature, TJM, and the  
80  
thermal resistance of the heat dissipating path determines  
the maximum allowable device power dissipation, PDM, in an  
R
= 26.51+ 19.84/(0.262+Area) EQ.2  
θJA  
R
= 26.51+ 128/(1.69+Area) EQ.3  
θJA  
application.  
Therefore the application’s ambient  
temperature, TA (oC), and thermal resistance RθJA (oC/W)  
must be reviewed to ensure that TJM is never exceeded.  
Equation 1 mathematically represents the relationship and  
serves as the basis for establishing the rating of the part.  
60  
40  
20  
(T  
T )  
A
JM  
(EQ. 1)  
P
= -----------------------------  
DM  
RθJA  
In using surface mount devices such as the TO-263  
package, the environment in which it is applied will have a  
significant influence on the part’s current and maximum  
power dissipation ratings. Precise determination of PDM is  
complex and influenced by many factors:  
0.1  
(0.645)  
1
10  
(6.45)  
(64.5)  
2
2
AREA, TOP COPPER AREA in (cm )  
Figure 21. Thermal Resistance vs Mounting  
Pad Area  
1. Mounting pad area onto which the device is attached and  
whether there is copper on one side or both sides of the  
board.  
2. The number of copper layers and the thickness of the  
board.  
3. The use of external heat sinks.  
4. The use of thermal vias.  
5. Air flow and board orientation.  
6. For non steady state applications, the pulse width, the  
duty cycle and the transient thermal response of the part,  
the board and the environment they are in.  
ON Semiconductor provides thermal information to  
assist  
the  
designer’s  
preliminary  
application  
evaluation. Figure 21  
defines the RθJA for the device as a function of the top  
copper (component side) area. This is for a horizontally  
positioned FR-4 board with 1oz copper after 1000 seconds  
of steady state power with no air flow. This graph provides  
the necessary information for calculation of the steady state  
junction temperature or power dissipation. Pulse  
applications can be evaluated using the ON  
Semiconductor device Spice thermal model or manually  
utilizing the normalized maximum transient thermal  
impedance curve.  
Thermal resistances corresponding to other copper areas  
can be obtained from Figure 21 or by calculation using  
Equation 2 or 3. Equation 2 is used for copper area defined  
in inches square and equation 3 is for area in centimeters  
square. The area, in square inches or square centimeters is  
the top copper area including the gate and source pads.  
19.84  
(0.262 + Area)  
R
= 26.51 + ------------------------------------  
(EQ. 2)  
θJA  
Area in Inches Squared  
128  
(1.69 + Area)  
R
= 26.51 + ---------------------------------  
(EQ. 3)  
θJA  
Area in Centimeters Squared  
www.onsemi.com  
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