Typical Characteristics TA = 25°C unless otherwise noted
400
100
200
If R = 0
10µs
t
AV
= (L)(I )/(1.3*RATED BV
- V
DD
)
AS
DSS
If R ≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DD
AV
AS
DSS
100
100µs
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o
2
STARTING T = 25 C
J
OPERATION IN THIS
AREA MAY BE
10
1
LIMITED BY r
DS(ON)
1ms
o
STARTING T = 150 C
J
10ms
DC
SINGLE PULSE
T
= MAX RATED
= 25 C
J
o
T
C
10
0.01
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
200
0.1
1
10
V
t , TIME IN AVALANCHE (ms)
DS
AV
NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
150
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 6V
GS
V
= 10V
GS
V
= 15V
V
= 5.5V
DD
GS
120
90
60
30
0
120
90
60
30
0
o
T
= 175 C
J
V
= 5V
GS
o
T
= 25 C
J
o
o
T
= 25 C
T
= -55 C
C
J
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
, GATE TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
GS
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
10
9
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 6V
GS
2.0
8
1.5
1.0
0.5
V
= 10V
GS
7
V
= 10V, I =80A
D
GS
6
0
20
40
I , DRAIN CURRENT (A)
62
80
-80
-40
0
40
80
120
o
160
200
T , JUNCTION TEMPERATURE ( C)
D
J
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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