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FDB3632-F085 参数 Datasheet PDF下载

FDB3632-F085图片预览
型号: FDB3632-F085
PDF下载: 下载PDF文件 查看货源
内容描述: [N 沟道,PowerTrench® MOSFET,100V,80A,9mΩ]
分类和应用: PC开关晶体管
文件页数/大小: 12 页 / 1368 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号FDB3632-F085的Datasheet PDF文件第4页浏览型号FDB3632-F085的Datasheet PDF文件第5页浏览型号FDB3632-F085的Datasheet PDF文件第6页浏览型号FDB3632-F085的Datasheet PDF文件第7页浏览型号FDB3632-F085的Datasheet PDF文件第8页浏览型号FDB3632-F085的Datasheet PDF文件第10页浏览型号FDB3632-F085的Datasheet PDF文件第11页浏览型号FDB3632-F085的Datasheet PDF文件第12页  
PSPICE Electrical Model  
.SUBCKT FDB3632 2 1 3 ;  
CA 12 8 1.7e-9  
rev May 2002  
Cb 15 14 2.5e-9  
Cin 6 8 6.0e-9  
LDRAIN  
DPLCAP  
DRAIN  
2
5
10  
Dbody 7 5 DbodyMOD  
Dbreak 5 11 DbreakMOD  
Dplcap 10 5 DplcapMOD  
RLDRAIN  
RSLC1  
51  
DBREAK  
+
RSLC2  
5
ESLC  
11  
51  
Ebreak 11 7 17 18 102.5  
Eds 14 8 5 8 1  
Egs 13 8 6 8 1  
Esg 6 10 6 8 1  
Evthres 6 21 19 8 1  
Evtemp 20 6 18 22 1  
-
+
50  
-
17  
DBODY  
RDRAIN  
6
8
EBREAK 18  
-
ESG  
EVTHRES  
+
16  
21  
+
-
19  
8
MWEAK  
LGATE  
EVTEMP  
RGATE  
GATE  
1
6
+
-
18  
22  
It 8 17 1  
MMED  
9
20  
MSTRO  
8
RLGATE  
Lgate 1 9 5.61e-9  
Ldrain 2 5 1.0e-9  
Lsource 3 7 2.7e-9  
LSOURCE  
CIN  
SOURCE  
3
7
RSOURCE  
RLSOURCE  
RLgate 1 9 56.1  
RLdrain 2 5 10  
RLsource 3 7 27  
S1A  
S2A  
RBREAK  
12  
15  
13  
8
14  
13  
17  
18  
RVTEMP  
19  
S1B  
S2B  
Mmed 16 6 8 8 MmedMOD  
Mstro 16 6 8 8 MstroMOD  
Mweak 16 21 8 8 MweakMOD  
13  
CB  
CA  
IT  
14  
-
+
+
VBAT  
6
8
5
8
EGS  
EDS  
+
Rbreak 17 18 RbreakMOD 1  
Rdrain 50 16 RdrainMOD 3.8e-3  
Rgate 9 20 1.1  
-
-
8
22  
RVTHRES  
RSLC1 5 51 RSLCMOD 1.0e-6  
RSLC2 5 50 1.0e3  
Rsource 8 7 RsourceMOD 2.5e-3  
Rvthres 22 8 RvthresMOD 1  
Rvtemp 18 19 RvtempMOD 1  
S1a 6 12 13 8 S1AMOD  
S1b 13 12 13 8 S1BMOD  
S2a 6 15 14 13 S2AMOD  
S2b 13 15 14 13 S2BMOD  
Vbat 22 19 DC 1  
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*350),3))}  
.MODEL DbodyMOD D (IS=5.9E-11 N=1.07 RS=2.3e-3 TRS1=3.0e-3 TRS2=1.0e-6  
+ CJO=4e-9 M=0.58 TT=4.8e-8 XTI=4.2)  
.MODEL DbreakMOD D (RS=0.17 TRS1=3.0e-3 TRS2=-8.9e-6)  
.MODEL DplcapMOD D (CJO=15e-10 IS=1.0e-30 N=10 M=0.6)  
.MODEL MstroMOD NMOS (VTO=4.1 KP=200 IS=1e-30 N=10 TOX=1 L=1u W=1u)  
.MODEL MmedMOD NMOS (VTO=3.4 KP=10.0 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.1)  
.MODEL MweakMOD NMOS (VTO=2.75 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.1e+1 RS=0.1)  
.MODEL RbreakMOD RES (TC1=1.0e-3 TC2=-1.7e-6)  
.MODEL RdrainMOD RES (TC1=8.5e-3 TC2=2.8e-5)  
.MODEL RSLCMOD RES (TC1=2.0e-3 TC2=2.0e-6)  
.MODEL RsourceMOD RES (TC1=4e-3 TC2=1e-6)  
.MODEL RvthresMOD RES (TC1=-4.0e-3 TC2=-1.8e-5)  
.MODEL RvtempMOD RES (TC1=-4.4e-3 TC2=2.2e-6)  
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-2)  
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-4)  
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.8 VOFF=0.4)  
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.4 VOFF=-0.8)  
.ENDS  
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global  
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank  
Wheatley.  
www.onsemi.com  
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