74HC574
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
V
Guaranteed Limit
CC
(V)
Symbol
Parameter
Test Conditions
= V – 0.1 V
*55 to 25_C v85_C v125_C
Unit
V
Minimum High−Level Input
V
out
2.0
3.0
4.5
6.0
1.5
2.1
1.5
2.1
1.5
2.1
V
IH
out
CC
Voltage
|I | v 20 mA
3.15
4.2
3.15
4.2
3.15
4.2
V
Maximum Low−Level Input
Voltage
V
out
= 0.1 V
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
IL
out
|I | v 20 mA
V
V
Minimum High−Level Output
V
out
= V
IH
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
V
OH
OH
in
Voltage
|I | v 20 mA
Minimum High−Level Output
Voltage
V
V
= V
= V
|I | v 2.4 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
in
IH
out
|I | v 6.0 mA
out
|I | v 7.8 mA
out
V
Maximum Low−Level Output
Voltage
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
OL
in
IL
|I | v 20 mA
out
V
= V
|I | v 2.4 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4
in
in
IL
out
|I | v 6.0 mA
out
|I | v 7.8 mA
out
I
Maximum Input Leakage
Current
V
= V or GND
6.0
$0.1
$1.0
$1.0
mA
mA
in
CC
I
Maximum Three−State
Leakage Current
Output in High−Impedance State
= V or V
6.0
$0.5
$5.0
$10
OZ
V
in
IL
IH
V
= V or GND
out
CC
I
Maximum Quiescent Supply
Current (per Package)
V
out
= V or GND
6.0
4.0
40
40
mA
CC
in
CC
I
= 0 mA
7. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
http://onsemi.com
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