TDA8950
NXP Semiconductors
2 × 150 W class-D power amplifier
001aai701
10
THD
(%)
1
−1
10
10
10
(1)
(2)
−2
−3
2
3
4
5
10
10
10
10
10
f (Hz)
i
VP = ±35 V, 2 × 6 Ω SE configuration.
(1) OUT2, Po = 1 W
(2) OUT2, Po = 10 W
Fig 16. THD as a function of frequency, SE configuration with 2 × 6 Ω load
001aai702
10
THD
(%)
1
−1
10
10
10
(1)
(2)
−2
−3
2
3
4
5
10
10
10
10
10
f (Hz)
VP = ±35 V, 1 × 8 Ω BTL configuration
(1) Po = 1 W
(2) Po = 10 W
Fig 17. THD as a function of frequency, BTL configuration with 1 × 8 Ω load
TDA8950_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 9 September 2008
26 of 39
NXP [ NXP ]
