TDA8950
NXP Semiconductors
2 × 150 W class-D power amplifier
001aai707
200
180
160
140
120
100
80
P
o
(W)
(1)
(2)
(3)
(4)
60
40
20
0
12.5
15
17.5
20
22.5
25
27.5
30
32.5
35
37.5
40
(V)
V
p
fi = 1 kHz, fosc = 325 kHz
Note: infinite heat sink used.
(1) THD = 10 %, 4 Ω
(2) THD = 0.5 %, 4 Ω; THD = 10 %, 6 Ω
(3) THD = 0.5 %, 6 Ω; THD = 10 %, 8 Ω
(4) THD = 0.5 %, 8 Ω
Fig 22. Output power as a function of supply voltage, SE configuration
001aai708
350
P
o
(W)
300
250
200
150
100
50
(1)
(2)
(3)
(4)
0
12.5
15
17.5
20
22.5
25
27.5
30
32.5
35
37.5
40
(V)
V
p
fi = 1 kHz, fosc = 325 kHz
Note: infinite heat sink used.
(1) THD = 10 %, 8 Ω
(2) THD = 0.5 %, 8 Ω
(3) THD = 10 %, 16 Ω
(4) THD = 0.5 %, 16 Ω
Fig 23. Output power as function of supply voltage, BTL configuration
TDA8950_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 9 September 2008
29 of 39
NXP [ NXP ]
