TDA8950
NXP Semiconductors
2 × 150 W class-D power amplifier
001aai423
10
THD
(%)
1
(1)
−1
10
10
10
(2)
(3)
−2
−3
−2
−1
2
3
10
10
1
10
10
10
P
(W)
O
VP = ±35 V, fosc = 350 kHz, 1 × 8 Ω BTL configuration.
(1) fi = 6 kHz
(2) fi = 1 kHz
(3) fi = 100 Hz
Fig 14. THD as a function of output power, BTL configuration with 1 × 8 Ω load
001aai424
10
THD
(%)
1
−1
10
(1)
−2
(2)
10
10
−3
2
3
4
5
10
10
10
10
10
f (Hz)
i
VP = ±35 V, 2 × 4 Ω SE configuration.
(1) OUT2, PO = 1 W
(2) OUT2, PO = 10 W
Fig 15. THD as a function of frequency, SE configuration with 2 × 4 Ω load
TDA8950_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 9 September 2008
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