TDA8950
NXP Semiconductors
2 × 150 W class-D power amplifier
001aai709
45
G
v(cl)
(dB)
40
(1)
35
30
25
20
(2)
(3)
(4)
2
3
4
5
10
10
10
10
10
f (Hz)
VP = ±35 V, Vi = 100 mV, Rs = 0 Ω, Ci = 330 pF.
(1) 1 × 8 Ω BTL configuration
(2) 2 × 4 Ω SE configuration
(3) 2 × 6 Ω SE configuration
(4) 2 × 8 Ω SE configuration
Fig 24. Gain as function of frequency, Rs = 0 Ω, Ci = 330 pF
001aai710
−20
SVRR
(dB)
−40
−60
(1)
−80
(2)
−100
−120
−140
(3)
2
3
4
6
10
10
10
10
10
f
(Hz)
ripple
Ripple on VDD, short on input pins.
VP = ±35 V, RL = 4 Ω, Vripple = 2 V (p-p).
(1) OUT2, mute
(2) OUT2, on
(3) OUT2, standby
Fig 25. SVRR as function of ripple frequency
TDA8950_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 9 September 2008
30 of 39