TDA8950
NXP Semiconductors
2 × 150 W class-D power amplifier
12.2 Stereo and dual SE application characteristics
Table 9.
Dynamic characteristics
VP = ±35 V; RL = 4 Ω; fi = 1 kHz; fosc = 345 kHz; RsL < 0.1 Ω[1]; Tamb = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
[2]
Po
output power
L = 22 µH; C = 680 nF; Tj = 85 °C
RL = 4 Ω; THD = 0.5 %; VP = ±37 V
RL = 4 Ω; THD = 10 %; VP = ±37 V
RL = 6 Ω; THD = 10 %; VP = ±37 V
RL = 4 Ω; THD = 10 %; VP = ±39 V
Po = 1 W; fi = 1 kHz
-
100
150
100
170
-
-
-
-
W
W
W
W
%
%
dB
-
-
-
[3]
[3]
THD
total harmonic distortion
-
0.05 -
0.05 -
Po = 1 W; fi = 6 kHz
-
Gv(cl)
closed-loop voltage gain
29
30
31
SVRR
supply voltage ripple rejection
between pin VDDPn and SGND
operating; fi = 100 Hz
operating; fi = 1 kHz
mute; fi = 100 Hz
[4]
[4]
[4]
[4]
-
-
-
-
90
-
-
-
-
dB
dB
dB
dB
70
75
standby; fi = 100 Hz
between pin VSSPn and SGND
operating; fi = 100 Hz
operating; fi = 1 kHz
mute; fi = 100 Hz
120
[4]
[4]
[4]
[4]
-
80
60
80
115
63
160
85
70
-
-
-
-
-
-
-
-
-
1
-
-
-
-
-
-
-
dB
dB
dB
dB
kΩ
µV
µV
dB
dB
dB
dB
%
-
-
standby; fi = 100 Hz
between the input pins and SGND
operating; Rs = 0 Ω
-
Zi
input impedance
45
-
[5]
[6]
[7]
Vn(o)
output noise voltage
mute
-
αcs
channel separation
-
|∆Gv|
αmute
CMRR
ηpo
voltage gain difference
mute attenuation
-
[8]
fi = 1 kHz; Vi = 2 V (RMS)
Vi(CM) = 1 V (RMS)
SE, RL = 4 Ω
-
75
75
88
90
88
200
190
common mode rejection ratio
output power efficiency
-
-
SE, RL = 6 Ω
-
BTL, RL = 8 Ω
-
%
[9]
[9]
RDSon(hs) high-side drain-source on-state resistance
RDSon(ls) low-side drain-source on-state resistance
-
mΩ
mΩ
-
[1] RsL is the series resistance of inductor of low-pass LC filter in the application.
[2] Output power is measured indirectly; based on RDSon measurement. See also Section 13.3.
[3] THD is measured in a bandwidth of 22 Hz to 20 kHz, using AES17 20 kHz brickwall filter. Maximum limit is not guaranteed100 % tested.
[4] Vripple = Vripple(max) = 2 V (p-p); Rs = 0 Ω. Measured independently between VDDPn and SGND and between VSSPn and SGND.
[5] B = 22 Hz to 20 kHz, using AES17 20 kHz brickwall filter.
[6] B = 22 Hz to 22 kHz, using AES17 20 kHz brickwall filter; independent of Rs.
[7] Po = 1 W; Rs = 0 Ω; fi = 1 kHz.
[8] Vi = Vi(max) = 1 V (RMS); fi = 1 kHz.
[9] Leads and bond wires included.
TDA8950_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 9 September 2008
15 of 39
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