TDA8950
NXP Semiconductors
2 × 150 W class-D power amplifier
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
-
Max
90
-
Unit
V
VP
supply voltage
non-operating mode; VDD − VSS
maximum output current limiting
IORM
repetitive peak
output current
9.2
A
Tstg
storage temperature
ambient temperature
junction temperature
−55
−40
-
+150
+85
150
6
°C
°C
°C
V
Tamb
Tj
VMODE
voltage on pin
MODE
referenced to SGND
0
VOSC
VI
voltage on pin OSC
0
SGND
+ 6
V
V
input voltage
referenced to SGND; pin IN1P; IN1M;
IN2P and IN2M
−5
0
+5
VPROT
Vesd
voltage on pin PROT referenced to voltage on pin VSSD
12
V
V
electrostatic
Human Body Model (HBM);
−1800 +1800
discharge voltage
pin VSSP1 with respect to other pins
HBM; all other pins
−2000 +2000
V
Machine Model (MM); all pins
Charged Device Model (CDM)
−200
−500
-
+200
+500
75
V
V
Iq(tot)
total quiescent
current
Operating mode; no load; no filter; no
RC-snubber network connected
mA
10. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Typ
40
Unit
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
K/W
K/W
Rth(j-c)
1.1
TDA8950_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 9 September 2008
12 of 39
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