BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise stated.
Symbol Parameter
Static characteristics
IGT gate trigger current
IL
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 100 mA; see Figure 8
2
-
-
-
15
40
mA
mA
latching current
holding current
VD = 12 V; IGT = 100 mA; see
Figure 10
IH
VD = 12 V; IGT = 100 mA; see
Figure 11
-
-
-
20
mA
V
VT
on-state voltage
IT = 23 A
1.4
1.75
VGT
gate trigger voltage
IT = 100 mA; see Figure 7
VD = 12 V
-
0.6
0.4
0.5
0.5
1.5
-
V
VD = VDRM(max); Tj = 150 °C
VR = VDRM(max); Tj = 150 °C
VR = VRRM(max); Tj = 150 °C
0.25
V
ID
IR
off-state current
reverse current
-
-
2.5
2.5
mA
mA
Dynamic characteristics
dVD/dt
rate of rise of off-state VDM = 0.67 × VDRM(max); Tj = 150 °C;
-
300
-
V/µs
voltage
exponential waveform; gate open
circuit; see Figure 12
tgt
tq
gate-controlled turn-on ITM = 40 A; VD = VDRM(max)
;
-
-
2
-
-
µs
µs
time
IG = 100 mA; dIG/dt = 5 A/µs
VDM = 0.67 × VDRM(max); Tj = 150 °C;
TM = 20 A; VR = 25 V;
(dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs;
GK = 100 Ω
commutated turn-off
time
70
I
R
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
6 of 12
NXP [ NXP ]
