BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
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1.6
3
I
V
GT
GT
I
V
GT(25°C)
GT(25°C)
1.2
0.8
0.4
2
1
0
−50
−50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
Fig 8. Normalized gate trigger current as a function of
junction temperature
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3
30
I
L
I
T
I
L(25°C)
(A)
2
20
(1)
(2) (3)
1
10
0
−50
0
0
50
100
150
0
0.5
1
1.5
2
T (°C)
j
V
(V)
T
Vo = 1.06 V
Rs = 0.0304 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
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