BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
001aaa956
3
10
I
TSM
(A)
dl /dt limit
T
2
10
I
I
T
TSM
t
T initial = 25 °C max
t
p
j
10
10
−5
−4
−3
−2
10
10
10
t
(s)
p
tp ≤ 10 ms
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
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16
25
I
T(RMS)
(A)
I
T(RMS)
(A)
20
15
10
5
12
8
4
0
−50
0
10
−2
−1
0
50
100
150
10
1
10
T
(°C)
surge duration (s)
mb
f = 50 Hz; Tmb ≤ 134 °C
Fig 4. RMS on-state current as a function of surge
duration for sinusoidal currents
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
4 of 12
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