BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
003aab830
a = 1.57
15
P
tot
(W)
1.9
2.2
10
2.8
4
conduction form
angle
(degrees)
factor
a
5
0
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
0
2
4
6
8
I
(A)
T(AV)
Form factor a = IT(RMS) / IT(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
003aab829
160
I
TSM
(A)
120
80
40
0
I
I
T
TSM
t
T initial = 25 °C max
t
p
j
2
3
1
10
10
10
n (number of cycles)
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
3 of 12
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