BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
003aab826
003aab827
4
3
10
I
H
dV /dt
D
I
H(25°C)
(V/µs)
3
2
10
2
1
10
0
−50
10
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
Gate open circuit
Fig 11. Normalized holding current as a function of
junction temperature
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical values
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
8 of 12