BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Version
BT151-1000RT
SC-46
SOT78
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDRM
Parameter
Conditions
Min
Max
1000
1000
7.5
Unit
V
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
-
-
-
VRRM
V
IT(AV)
half sine wave; Tmb ≤ 134 °C;
A
see Figure 1
IT(RMS)
ITSM
RMS on-state current
all conduction angles; see Figure 4
and 5
-
12
A
non-repetitive peak on-state
current
half sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 10 ms
t = 8.3 ms
t = 10 ms
-
-
-
-
120
131
72
A
A
A2s
I2t
I2t for fusing
dIT/dt
rate of rise of on-state current
ITM = 20 A; IG = 50 mA;
50
A/µs
dIG/dt = 50 mA/µs
IGM
peak gate current
peak gate power
-
2
A
PGM
PG(AV)
Tstg
Tj
-
5
W
W
°C
°C
average gate power
storage temperature
junction temperature
over any 20 ms period
-
0.5
+150
150
−40
-
BT151-1000RT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 6 August 2007
2 of 12
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