Table 13. Carrier Side Load Pull Performance — Maximum Power Tuning
V
= 48 Vdc, I
= 704 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQA
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
51.5
57.5
61.1
Gain (dB)
19.4
(dBm)
53.3
(W)
216
226
(MHz)
758
780
822
4.45 – j6.09
4.79 – j7.15
7.09 – j9.84
4.50 + j6.10
3.66 – j0.70
1.87 + j0.82
1.95 + j0.64
–9
–5
–6
4.67 + j6.96
6.84 + j9.59
20.1
53.5
19.6
53.8
241
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
56.2
61.5
62.6
Gain (dB)
(dBm)
(W)
(MHz)
758
4.45 – j6.09
4.19 + j6.43
3.55 – j0.55
2.15 + j0.60
2.09 + j0.43
17.5
54.4
272
–10
–9
780
822
4.79 – j7.15
7.09 – j9.84
4.57 + j7.46
6.79 + j10.2
18.0
17.4
54.6
54.7
288
292
–10
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 14. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
V
= 48 Vdc, I
= 704 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQA
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
60.9
71.3
72.3
Gain (dB)
(dBm)
(W)
(MHz)
758
780
822
4.45 – j6.09
4.79 – j7.15
7.09 – j9.84
4.02 + j6.30
3.33 + j2.99
1.98 + j2.84
1.58 + j2.62
22.1
51.3
133
–8
–8
4.15 + j7.31
6.11 + j9.97
22.7
22.2
51.5
51.1
141
128
–12
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
64.5
72.6
73.6
Gain (dB)
(dBm)
(W)
(MHz)
758
4.45 – j6.09
3.94 + j6.62
3.66 + j2.45
2.49 + j2.82
1.84 + j2.66
19.7
53.0
198
–9
780
822
4.79 – j7.15
7.09 – j9.84
4.29 + j7.83
6.31 + j10.7
20.4
20.0
52.7
52.0
186
158
–14
–19
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A2V07H525--04NR6
RF Device Data
NXP Semiconductors
15
NXP [ NXP ]
