Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
= 26 mA, I
Max
Unit
(1,2,3)
Functional Tests
= 1.7 Vdc, V
(In Freescale Doherty Production Test Fixture, 50 ohm system) V = 28 Vdc, I
= 174 mA,
DD
DQ1A
DQ2A
V
= 1.3 Vdc, P = 10.5 W Avg., f = 2590 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal
GS1B
GS2B
out
PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
24.6
37.5
26.1
28.0
—
dB
%
ps
Power Added Efficiency
Adjacent Channel Power Ratio
PAE
ACPR
P3dB
40.4
—
–31.6
–28.0
—
dBc
W
P
@ 3 dB Compression Point
38.9
48.2
out
(2)
Load Mismatch (In Freescale Doherty Production Test Fixture, 50 ohm system) I
= 26 mA, I
= 174 mA, V
= 1.7 Vdc,
DQ1A
DQ2A
GS1B
V
= 1.3 Vdc, f = 2590 MHz
GS2B
VSWR 10:1 at 32 Vdc, 55 W CW Output Power
(3 dB Input Overdrive from 36 W CW Rated Power)
No Device Degradation
(2)
Typical Performance
(In Freescale Doherty Characterization Test Fixture, 50 ohm system) V = 28 Vdc, I
= 26 mA,
DQ1A
DD
I
= 163 mA, V
= 1.7 Vdc, V
= 1.3 Vdc, 2496–2690 MHz Bandwidth
DQ2A
GS1B
GS2B
P
P
@ 1 dB Compression Point, CW
P1dB
—
—
—
52
57
—
—
—
W
W
out
out
(4)
@ 3 dB Compression Point
P3dB
AM/PM
(Maximum value measured at the P3dB compression point across
–27.2
the 2496–2690 MHz frequency range.)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
180
—
MHz
%
res
(5)
Quiescent Current Accuracy over Temperature
I
QT
with 2 k Gate Feed Resistors (–30 to 85C) Stage 1
with 2 k Gate Feed Resistors (–30 to 85C) Stage 2
—
—
4.76
2.33
—
—
Gain Flatness in 194 MHz Bandwidth @ P = 10.5 W Avg.
G
—
—
0.312
0.030
—
—
dB
out
F
Gain Variation over Temperature
G
dB/C
(–30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.006
—
dB/C
(–30C to +85C)
Table 6. Ordering Information
Device
Tape and Reel Information
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
Package
A2I25H060NR1
TO--270WB--17
A2I25H060GNR1
TO--270WBG--17
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
4. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal
avg
avg
where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
5. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
A2I25H060NR1 A2I25H060GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
NXP [ NXP ]
