欢迎访问ic37.com |
会员登录 免费注册
发布采购

A2I25H060NR1 参数 Datasheet PDF下载

A2I25H060NR1图片预览
型号: A2I25H060NR1
PDF下载: 下载PDF文件 查看货源
内容描述: [RF LDMOS Wideband Integrated Power Amplifiers]
分类和应用:
文件页数/大小: 31 页 / 1058 K
品牌: NXP [ NXP ]
 浏览型号A2I25H060NR1的Datasheet PDF文件第5页浏览型号A2I25H060NR1的Datasheet PDF文件第6页浏览型号A2I25H060NR1的Datasheet PDF文件第7页浏览型号A2I25H060NR1的Datasheet PDF文件第8页浏览型号A2I25H060NR1的Datasheet PDF文件第10页浏览型号A2I25H060NR1的Datasheet PDF文件第11页浏览型号A2I25H060NR1的Datasheet PDF文件第12页浏览型号A2I25H060NR1的Datasheet PDF文件第13页  
TYPICAL CHARACTERISTICS  
60  
50  
40  
30  
20  
10  
0
30  
29  
28  
27  
26  
25  
24  
10  
V
V
= 28 Vdc, I  
GS1B  
Single--Carrier W--CDMA  
= 26 mA, I  
GS2B  
= 163 mA  
DD  
DQ1A  
DQ2A  
= 1.3 Vdc  
2496 MHz  
2590 MHz  
= 1.7 Vdc, V  
0
PAE  
–10  
–20  
–30  
–40  
–50  
2496 MHz  
2590 MHz  
2690 MHz  
2690 MHz  
2690 MHz  
2590 MHz  
2496 MHz  
G
ps  
ACPR  
3.84 MHz Channel Bandwidth, Input Signal  
PAR = 9.9 dB @ 0.01% Probability on CCDF  
1
10  
40  
P
, OUTPUT POWER (WATTS) AVG.  
out  
Figure 8. Single--Carrier W--CDMA Power Gain, Power Added  
Efficiency and ACPR versus Output Power  
28  
Gain  
26  
24  
22  
20  
V
P
= 28 Vdc  
= 0 dBm  
DD  
in  
I
V
= 26 mA, I  
= 163 mA  
18  
16  
DQ1A  
DQ2A  
= 1.7 Vdc, V  
= 1.3 Vdc  
GS1B  
GS2B  
2200 2300 2400 2500 2600 2700 2800 2900 3000  
f, FREQUENCY (MHz)  
Figure 9. Broadband Frequency Response  
A2I25H060NR1 A2I25H060GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
9