Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Carrier Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 1.0 Vdc, V = 0 Vdc)
I
1
GS
DS
Carrier Stage 1 -- On Characteristics
(1)
Gate Threshold Voltage
V
V
0.8
—
1.2
2.0
3.5
1.6
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V = 10 Vdc, I = 4 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I
= 26 mAdc)
DQ1A
DS
Fixture Gate Quiescent Voltage
V
2.9
4.4
(V = 28 Vdc, I
= 26 mAdc, Measured in Functional Test)
DD
DQ1A
(1)
Carrier Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
I
DS
GS
Gate--Source Leakage Current
(V = 1.0 Vdc, V = 0 Vdc)
I
1
GS
DS
Carrier Stage 2 -- On Characteristics
(1)
Gate Threshold Voltage
V
V
0.8
—
1.2
1.7
1.6
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V = 10 Vdc, I = 26 Adc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I
= 174 mAdc)
DQ2A
DS
Fixture Gate Quiescent Voltage
V
2.9
0.1
3.6
4.4
1.5
(V = 28 Vdc, I
= 174 mAdc, Measured in Functional Test)
DD
DQ2A
(1)
Drain--Source On--Voltage
V
0.22
(V = 10 Vdc, I = 350 mAdc)
GS
D
1. Each side of device measured separately.
(continued)
A2I25H060NR1 A2I25H060GNR1
RF Device Data
Freescale Semiconductor, Inc.
3