Document Number: A2I25H060N
Rev. 0, 1/2016
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
A2I25H060NR1
A2I25H060GNR1
The A2I25H060N wideband integrated circuit is an asymmetrical Doherty
designed with on -- chip matching that makes it usable from 2300 to
2690 MHz. This multi--stage structure is rated for 20 to 32 V operation and
covers all typical cellular base station modulation formats.
2300–2690 MHz, 10.5 W AVG., 28 V
AIRFAST RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
2600 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD = 28 Vdc, IDQ1A = 26 mA, IDQ2A = 163 mA, VGS1B = 1.7 Vdc,
VGS2B = 1.3 Vdc, Pout = 10.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.(1)
G
PAE
(%)
ACPR
(dBc)
ps
TO--270WB--17
PLASTIC
A2I25H060NR1
Frequency
2496 MHz
2590 MHz
2690 MHz
(dB)
27.1
27.5
27.1
40.9
40.9
39.4
–31.5
–34.0
–34.7
2300 MHz
TO--270WBG--17
PLASTIC
A2I25H060GNR1
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ1A = 28 mA, IDQ2A = 177 mA, VGS1B = 1.8 Vdc, VGS2B = 1.3 Vdc,
P
out = 10.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF.(1)
G
PAE
(%)
ACPR
(dBc)
ps
Frequency
2300 MHz
2350 MHz
2400 MHz
(dB)
26.7
27.0
27.1
38.9
38.9
39.0
–33.7
–34.8
–34.7
Features
Advanced High Performance In--Package Doherty
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (2)
Designed for Digital Predistortion Error Correction Systems
1. All data measured in fixture with device soldered to heatsink.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
Freescale Semiconductor, Inc., 2016. All rights reserved.
A2I25H060NR1 A2I25H060GNR1
RF Device Data
Freescale Semiconductor, Inc.
1
NXP [ NXP ]
