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A2I25H060NR1 参数 Datasheet PDF下载

A2I25H060NR1图片预览
型号: A2I25H060NR1
PDF下载: 下载PDF文件 查看货源
内容描述: [RF LDMOS Wideband Integrated Power Amplifiers]
分类和应用:
文件页数/大小: 31 页 / 1058 K
品牌: NXP [ NXP ]
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V
V
DS1A  
Carrier  
VBW  
17  
16  
A
(2)  
V
1
2
VBW  
DS1A  
GS2A  
A
V
V
RF  
3
4
RF /V  
out1 DS2A  
inA  
GS1A  
RF  
RF /V  
out1 DS2A  
inA  
N.C.  
5
GND  
GND  
N.C.  
6
GND  
15  
14  
GS1A  
GS2A  
Quiescent Current  
Temperature Compensation  
7
(1)  
(1)  
V
8
9
10  
11  
12  
RF  
inB  
RF /V  
out2 DS2B  
V
V
V
GS1B  
GS2B  
GS1B  
GS2B  
Quiescent Current  
Temperature Compensation  
V
13  
(2)  
V
VBW  
DS1B  
B
Peaking  
(Top View)  
RF  
RF /V  
out2 DS2B  
inB  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
V
VBW  
DS1B  
B
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
2. Device can operate with V current  
DD  
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated  
Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit  
Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.  
supplied through pin 13 and pin 17.  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
–0.5, +65  
–0.5, +10  
32, +0  
Unit  
Vdc  
Vdc  
Vdc  
C  
Drain--Source Voltage  
Gate--Source Voltage  
Operating Voltage  
V
DSS  
V
GS  
DD  
V
Storage Temperature Range  
Case Operating Temperature Range  
T
stg  
–65 to +150  
–40 to +150  
–40 to +225  
22  
T
C
C  
(3,4)  
Operating Junction Temperature Range  
T
J
C  
Input Power  
P
dBm  
in  
Table 2. Thermal Characteristics  
Characteristic  
(4,5)  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
C/W  
JC  
Case Temperature 77C, 10.5 W Avg., 2590 MHz  
Stage 1, 28 Vdc, I  
Stage 2, 28 Vdc, I  
= 30 mA, V  
= 190 mA, V  
= 3.5 Vdc, V = 1.7 Vdc  
5.6  
2.2  
DQ1A  
DQ2A  
G1A  
G1B  
= 3.65 Vdc, V  
= 1.3 Vdc  
G2B  
G2A  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22--A114)  
Machine Model (per EIA/JESD22--A115)  
Charge Device Model (per JESD22--C101)  
1B  
A
II  
Table 4. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD22--A113, IPC/JEDEC J--STD--020  
3
260  
C  
3. Continuous use at maximum temperature will affect MTTF.  
4. MTTF calculator available at http://www.nxp.com/RF/calculators.  
5. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.  
A2I25H060NR1 A2I25H060GNR1  
RF Device Data  
Freescale Semiconductor, Inc.  
2