Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Peaking Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 1.0 Vdc, V = 0 Vdc)
I
1
GS
DS
(1)
(1)
Peaking Stage 1 -- On Characteristics
Gate Threshold Voltage
V
0.8
1.2
1.6
Vdc
GS(th)
(V = 10 Vdc, I = 8 Adc)
DS
D
Peaking Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
I
DS
GS
Gate--Source Leakage Current
(V = 1.0 Vdc, V = 0 Vdc)
I
1
GS
DS
(1)
Peaking Stage 2 -- On Characteristics
Gate Threshold Voltage
V
0.8
0.1
1.2
1.6
1.5
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 42 Adc)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 565 mAdc)
V
0.22
DS(on)
GS
D
1. Each side of device measured separately.
(continued)
A2I25H060NR1 A2I25H060GNR1
RF Device Data
Freescale Semiconductor, Inc.
4
NXP [ NXP ]
