D99736
V
DS2
V
GS2
A2I09VD015N
V
DS1
V
GS1
R1
C8
C7
R2
C1
C2
C15
C24
C23
C3
Rev. 2
C11
C19
C12
Z1
C17
R7
C25
R8
C21
R5
Q1
Z2
R10
R9
C22
C28
R6
C18
C14
C26
C27
C16
C13
C20
C4
C5
C6
C10
R4
C9
V
GS3
V
DS1
R3
GS4
V
V
DS2
Note: All data measured in fixture with device soldered to heatsink. Production fixture does not include device
soldered to heatsink.
Figure 4. A2I09VD015NR1 Characterization Test Circuit Component Layout — 920–960 MHz
Table 8. A2I09VD015NR1 Characterization Test Circuit Component Designations and Values — 920–960 MHz
Part
Description
Part Number
C5750X7SA106M230KB
C3225X7S1H106M250AB
C0805C103K5RAC
ATC600S470JT250XT
A2I09VD015N
Manufacturer
TDK
C1, C2, C3, C4, C5, C6, C7, C8, C9, C10
10 F Chip Capacitor
C11, C12, C13, C14
10 F Chip Capacitor
TDK
C15, C16, C17, C18
10 nF Chip Capacitor
Kemet
ATC
C19, C20, C21, C22, C23, C24, C25, C26, C27, C28
47 pF Chip Capacitor
Q1
RF Power LDMOS Amplifier
2.2 k, 1/8 W Chip Resistor
50 , 8 W Termination Chip Resistor
50 , 20 W Termination Chip Resistor
10 , 1/8 W Chip Resistor
NXP
R1, R2, R3, R4
CRCW08052K20JNEA
C8A50Z4A
Vishay
Anaren
Anaren
Vishay
Anaren
MTL
R5
R6
C20A50Z4
R7, R8, R9, R10
Z1, Z2
CRCW080510R0FKEA
X3C09P1-03
800--1000 MHz, 90, 3 dB Hybrid Coupler
PCB
Rogers RO4350B, 0.020, = 3.66
D99736
r
A2I09VD015NR1 A2I09VD015GNR1
RF Device Data
NXP Semiconductors
6
NXP [ NXP ]
