Table 9. Load Pull Performance — Maximum Power Tuning
V
= 48 Vdc, I
= 8 mA, I = 39 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ1
DQ2
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
59.5
59.6
58.7
Gain (dB)
31.6
(dBm)
40.2
(W)
10
(MHz)
920
940
960
51.0 – j3.11
49.2 + j1.23
50.9 + j2.55
65.8 + j7.62
35.3 + j33.2
32.5 + j32.9
29.7 + j32.1
–2
–3
–4
60.4 + j2.53
54.2 + j0.33
31.5
40.2
11
31.3
40.2
10
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
62.1
61.5
61.1
Gain (dB)
29.6
(dBm)
41.1
(W)
13
(MHz)
920
51.0 – j3.11
66.2 + j7.48
33.7 + j31.8
31.3 + j31.1
28.8 + j30.7
–3
–4
–5
940
960
49.2 + j1.23
50.9 + j2.55
60.0 + j2.49
52.8 + j1.10
29.5
41.1
13
29.3
41.0
13
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Note: Measurement made on a per side basis.
Table 10. Load Pull Performance — Maximum Efficiency Tuning
V
= 48 Vdc, I
= 8 mA, I = 39 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ1
DQ2
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
70.0
68.8
67.5
Gain (dB)
33.7
(dBm)
38.5
(W)
7
(MHz)
920
940
960
51.0 – j3.11
49.2 + j1.23
50.9 + j2.55
67.5 + j6.05
18.5 + j45.3
14.3 + j44.7
18.0 + j40.8
–4
–5
–4
60.9 + j1.05
54.3 + j0.28
33.8
37.5
6
32.9
38.8
8
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
71.1
69.9
69.4
Gain (dB)
31.7
(dBm)
39.4
(W)
9
(MHz)
920
51.0 – j3.11
67.3 + j4.87
18.5 + j45.7
13.0 + j46.5
18.3 + j40.8
–3
–4
–2
940
960
49.2 + j1.23
50.9 + j2.55
59.2 – j0.18
53.5 – j0.45
32.0
38.1
6
30.9
39.8
10
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Note: Measurement made on a per side basis.
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
A2I09VD015NR1 A2I09VD015GNR1
RF Device Data
NXP Semiconductors
9
NXP [ NXP ]
