Table 1. Maximum Ratings
Rating
Symbol
Value
–0.5, +105
–0.5, +10
55, +0
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
20
T
C
C
(1,2)
Operating Junction Temperature Range
Input Power
T
J
C
P
dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
C/W
JC
Case Temperature 74C, 2 W, 940 MHz
Stage 1, 48 Vdc, I
Stage 2, 48 Vdc, I
16 mA
78 mA
7.2
3.1
DQ1(A+B)
DQ2(A+B)
Table 3. ESD Protection Characteristics
Test Methodology
Class
1B
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
C0B
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
A2I09VD015NR1 A2I09VD015GNR1
RF Device Data
NXP Semiconductors
2
NXP [ NXP ]
