Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 105 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 55 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 1.2 Vdc, V = 0 Vdc)
I
1
GS
DS
Stage 1 -- On Characteristics
(1)
Gate Threshold Voltage
V
V
1.3
2.2
4.4
1.8
2.4
4.8
2.3
2.6
5.2
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V = 10 Vdc, I = 1 Adc)
DS
D
Gate Quiescent Voltage
(V = 48 Vdc, I
= 16 mAdc)
DQ1(A+B)
DS
Fixture Gate Quiescent Voltage
V
(V = 48 Vdc, I
DD
= 16 mAdc, Measured in Functional Test)
DQ1(A+B)
(1)
Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 105 Vdc, V = 0 Vdc)
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 55 Vdc, V = 0 Vdc)
I
DS
GS
Gate--Source Leakage Current
(V = 1.2 Vdc, V = 0 Vdc)
I
1
GS
DS
Stage 2 -- On Characteristics
(1)
Gate Threshold Voltage
V
V
1.3
2.0
4.0
0.1
1.8
2.2
4.4
0.3
2.3
2.4
4.8
0.5
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V = 10 Vdc, I = 6 Adc)
DS
D
Gate Quiescent Voltage
(V = 48 Vdc, I
= 78 mAdc)
DQ2(A+B)
DS
Fixture Gate Quiescent Voltage
(V = 48 Vdc, I = 78 mAdc, Measured in Functional Test)
V
DD
DQ2(A+B)
(1)
Drain--Source On--Voltage
(V = 10 Vdc, I = 60 mAdc)
V
GS
D
1. Each side of device measured separately.
(continued)
A2I09VD015NR1 A2I09VD015GNR1
RF Device Data
NXP Semiconductors
3
NXP [ NXP ]
