Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
= 16 mA, I = 78 mA,
DQ2(A+B)
Max
Unit
(1,2)
Functional Tests
(In NXP Production Test Fixture, 50 ohm system) V = 48 Vdc, I
DD
DQ1(A+B)
P
= 2 W Avg., f = 920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
31.0
18.0
—
32.8
18.8
34.0
—
dB
%
ps
Power Added Efficiency
PAE
ACPR
Adjacent Channel Power Ratio
–43.9
18.5
–41.0
—
dBc
W
P
@ 3 dB Compression Point, CW
P3dB
16.6
out
Load Mismatch (In NXP Production Test Fixture, 50 ohm system) I
= 16 mA, I
= 78 mA, f = 940 MHz
DQ2(A+B)
DQ1(A+B)
VSWR 10:1 at 55 Vdc, 24 W CW Output Power
(3 dB Input Overdrive from 19 W CW Rated Power)
No Device Degradation
(3)
Typical Performance (In NXP Characterization Test Fixture, 50 ohm system) V = 48 Vdc, I
= 16 mA, I
= 78 mA,
DD
DQ1(A+B)
DQ2(A+B)
920–960 MHz Bandwidth
P
P
@ 1 dB Compression Point, CW
P1dB
P3dB
—
17.7
18.5
–9
—
—
—
W
W
out
out
(4)
@ 3 dB Compression Point
—
—
AM/PM
(Maximum value measured at the P3dB compression point across
the 920–960 MHz frequency range.)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
270
—
MHz
%
res
(5)
Quiescent Current Accuracy over Temperature
I
QT
with 2 k Gate Feed Resistors (--30 to 85C) Stage 1
with 2 k Gate Feed Resistors (--30 to 85C) Stage 2
—
—
2.9
3.2
—
—
Gain Flatness in 40 MHz Bandwidth @ P = 2 W Avg.
G
—
—
0.2
—
—
dB
out
F
Gain Variation over Temperature
G
0.036
dB/C
(–30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.007
—
dB/C
(–30C to +85C)
Table 6. Ordering Information
Device
Tape and Reel Information
Package
A2I09VD015NR1
A2I09VD015GNR1
TO--270WB--15
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
TO--270WBG--15
1. Part internally input and output matched.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
3. All data measured in fixture with device soldered to heatsink.
4. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
5. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
A2I09VD015NR1 A2I09VD015GNR1
RF Device Data
NXP Semiconductors
4
NXP [ NXP ]
