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NAND01GW3B2CZA6T 参数 Datasheet PDF下载

NAND01GW3B2CZA6T图片预览
型号: NAND01GW3B2CZA6T
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 128MX8, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 60 页 / 1343 K
品牌: NUMONYX [ NUMONYX B.V ]
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Maximum ratings  
NAND01G-B2B, NAND02G-B2C  
10  
Maximum ratings  
Stressing the device above the ratings listed in Table 19: Absolute maximum ratings, may  
cause permanent damage to the device. These are stress ratings only and operation of the  
device at these or any other conditions above those indicated in the operating sections of  
this specification is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect device reliability.  
Table 19. Absolute maximum ratings  
Value  
Symbol  
Parameter  
Unit  
Min  
Max  
TBIAS  
TSTG  
Temperature under bias  
– 50  
– 65  
125  
150  
2.7  
4.6  
2.7  
4.6  
°C  
°C  
V
Storage temperature  
1.8 V devices  
3 V devices  
1.8 V devices  
3 V devices  
– 0.6  
– 0.6  
– 0.6  
– 0.6  
(1)  
VIO  
Input or output voltage  
V
V
VDD  
Supply voltage  
V
1. Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins.  
Maximum voltage may overshoot to VDD + 2 V for less than 20 ns during transitions on I/O pins.  
40/60  
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