DC and AC parameters
NAND01G-B2B, NAND02G-B2C
Table 24. AC characteristics for command, address, data input
Alt.
1.8 V
devices devices
3 V
Symbol
Parameter
Unit
symbol
tALLWH
tALHWH
Address Latch Low to Write Enable High
Address Latch High to Write Enable High
tALS
AL setup time
CL setup time
Min
Min
25
25
15
15
ns
Command Latch High to Write Enable
High
tCLHWH
tCLLWH
tCLS
ns
Command Latch Low to Write Enable
High
tDVWH
tELWH
tWHALH
tWHALL
tDS
tCS
Data Valid to Write Enable High
Data setup time Min
20
35
15
20
ns
ns
Chip Enable Low to Write Enable High
E setup time
Min
Min
Min
Write Enable High to Address Latch High AL hold time
Write Enable High to Address Latch Low AL hold time
Write Enable High to Command Latch
tALH
10
5
ns
tWHCLH
tWHCLL
High
tCLH
CL hold time
Min
10
5
ns
Write Enable High to Command Latch
Low
tWHDX
tWHEH
tWHWL
tWLWH
tWLWL
tDH
tCH
tWH
tWP
tWC
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
Data hold time
E hold time
Min
Min
10
10
15
25
45
5
ns
ns
ns
ns
ns
5
W High hold time Min
W pulse width Min
Write cycle time Min
10
15
30
44/60
NUMONYX [ NUMONYX B.V ]
