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NAND01GW3B2CZA6T 参数 Datasheet PDF下载

NAND01GW3B2CZA6T图片预览
型号: NAND01GW3B2CZA6T
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 128MX8, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 60 页 / 1343 K
品牌: NUMONYX [ NUMONYX B.V ]
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Device operations  
NAND01G-B2B, NAND02G-B2C  
6.9  
Read electronic signature  
The device contains a manufacturer code and device code. To read these codes three steps  
are required:  
1. One bus write cycle to issue the Read Electronic Signature command (90h)  
2. One bus write cycle to input the address (00h)  
3. Four bus read cycles to sequentially output the data (as shown in Table 14: Electronic  
signature).  
Table 14. Electronic signature  
byte/word 1  
byte/word 2  
Device code  
byte/word 3  
byte/word 4  
Part number  
Manufacturer  
code  
(see Table 15)  
(see Table 16)  
NAND01GR3B2B  
NAND01GW3B2B  
NAND01GR4B2B  
NAND01GW4B2B  
NAND02GR3B2C  
NAND02GW3B2C  
NAND02GR4B2C  
NAND02GW42C  
A1h  
F1h  
B1h  
C1h  
AAh  
DAh  
BAh  
CAh  
15h  
1Dh  
55h  
5Dh  
15h  
1Dh  
55h  
5Dh  
20h  
0020h  
20h  
80h  
0020h  
Table 15. Electronic signature byte 3  
I/O  
Definition  
Value  
Description  
0 0  
0 1  
1 0  
1 1  
1
2
4
8
I/O1-I/O0  
Internal chip number  
0 0  
0 1  
1 0  
1 1  
2-level cell  
4-level cell  
8-level cell  
16-level cell  
I/O3-I/O2  
I/O5-I/O4  
Cell type  
0 0  
0 1  
1 0  
1 1  
1
2
4
8
Number of simultaneously  
programmed pages  
0
1
Not supported  
supported  
Interleaved programming  
between multiple devices  
I/O6  
I/O7  
0
1
Not supported  
supported  
Cache program  
32/60  
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