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NAND01GW3B2CZA6T 参数 Datasheet PDF下载

NAND01GW3B2CZA6T图片预览
型号: NAND01GW3B2CZA6T
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 128MX8, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 60 页 / 1343 K
品牌: NUMONYX [ NUMONYX B.V ]
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Data protection  
NAND01G-B2B, NAND02G-B2C  
7
Data protection  
The device has hardware features to protect against program and erase operations.  
It features a Write Protect, WP, pin, which can be used to protect the device against program  
and erase operations. It is recommended to keep WP at V during power-up and power-  
IL  
down.  
In addition, to protect the memory from any involuntary program/erase operations during  
power-transitions, the device has an internal voltage detector which disables all functions  
whenever V is below V  
(see Table 22 and Table 23).  
DD  
LKO  
34/60  
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