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NAND01GW3B2CZA6T 参数 Datasheet PDF下载

NAND01GW3B2CZA6T图片预览
型号: NAND01GW3B2CZA6T
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 128MX8, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 60 页 / 1343 K
品牌: NUMONYX [ NUMONYX B.V ]
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NAND01G-B2B, NAND02G-B2C  
Command set  
5
Command set  
All bus write operations to the device are interpreted by the command interface. The  
commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when  
the Command Latch Enable signal is High. Device operations are selected by writing  
specific commands to the command register. The two-step command sequences for  
program and erase operations are imposed to maximize data security.  
The commands are summarized in Table 10: Commands.  
Table 10. Commands  
Bus write operations(1)  
Commands  
accepted  
during  
Command  
1st cycle  
2nd cycle  
3rd cycle  
4th cycle  
busy  
Read  
00h  
05h  
00h  
34h  
30h  
E0h  
31h  
Random Data Output  
Cache Read  
Exit Cache Read  
Yes(2)  
Page Program  
80h  
10h  
(Sequential Input default)  
Random Data Input  
Copy Back Program  
Cache Program  
Block Erase  
85h  
00h  
80h  
60h  
FFh  
90h  
70h  
35h  
15h  
D0h  
85h  
10h  
Reset  
Yes  
Yes  
Read Electronic Signature  
Read Status Register  
1. The bus cycles are only shown for issuing the codes. The cycles required to input the  
addresses or input/output data are not shown.  
2. Only during Cache Read busy.  
19/60  
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