欢迎访问ic37.com |
会员登录 免费注册
发布采购

M25PE80-VMN6P 参数 Datasheet PDF下载

M25PE80-VMN6P图片预览
型号: M25PE80-VMN6P
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存内存集成电路
文件页数/大小: 66 页 / 1387 K
品牌: NUMONYX [ NUMONYX B.V ]
 浏览型号M25PE80-VMN6P的Datasheet PDF文件第2页浏览型号M25PE80-VMN6P的Datasheet PDF文件第3页浏览型号M25PE80-VMN6P的Datasheet PDF文件第4页浏览型号M25PE80-VMN6P的Datasheet PDF文件第5页浏览型号M25PE80-VMN6P的Datasheet PDF文件第7页浏览型号M25PE80-VMN6P的Datasheet PDF文件第8页浏览型号M25PE80-VMN6P的Datasheet PDF文件第9页浏览型号M25PE80-VMN6P的Datasheet PDF文件第10页  
Description  
M25PE80  
1
Description  
The M25PE80 is an 8-Mbit (1 Mb ×8) serial paged flash memory accessed by a high speed  
SPI-compatible bus.  
The memory can be written or programmed 1 to 256 bytes at a time, using the page write or  
page program instruction. The page write instruction consists of an integrated page erase  
cycle followed by a page program cycle.  
The memory is organized as 16 sectors that are further divided up into 16 subsectors each  
(256 subsectors in total). Each sector contains 256 pages and each subsector contains 16  
pages. Each page is 256-byte wide. Thus, the whole memory can be viewed as consisting  
of 4096 pages, or 1 048 576 bytes.  
The memory can be erased a page at a time, using the page erase instruction, a subsector  
at a time, using the subsector erase instruction, a sector at a time, using the sector erase  
instruction, or as a whole, using the bulk erase instruction.  
The memory can be write protected by either hardware or software using a mix of volatile  
and non-volatile protection features, depending on the application needs. The protection  
granularity is of 64 Kbytes (sector granularity).  
Important note  
This datasheet details the functionality of the M25PE80 devices, based on the previous T7Y  
process or based on the current T9HX process (available since June 2007). Delivery of  
parts operating with a maximum clock rate of 75 MHz starts from week 8 of 2008.  
What are the changes?  
The M25PE80 in T9HX process offers the following additional features:  
the whole memory array is partitioned into 4-Kbyte subsectors  
two new instructions: write status register (WRSR) and 4-Kbyte subsector erase (SSE)  
Status register: 4 bits can be written (BP0, BP1, BP2, SRWD)  
WP input (pin 3): write protection limits are extended, depending on the value of the  
BP0, BP1, BP2, SRWD bits. The WP write protection remains the same if bits (BP2,  
BP1, BP0) are set to (0, 0, 1)  
smaller die size allowing assembly into an SO8N package.  
Suppressed feature:  
The write protection (defined by the WL and LD lock bits) of the 4-Kbyte subsectors in  
the top and bottom sectors is no longer offered.  
For more details please refer to PCNMPG062148.  
6/66  
 复制成功!