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M25PE80-VMN6P 参数 Datasheet PDF下载

M25PE80-VMN6P图片预览
型号: M25PE80-VMN6P
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存内存集成电路
文件页数/大小: 66 页 / 1387 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25PE80  
Initial delivery state  
9
Initial delivery state  
The device is delivered with the memory array erased: all bits are set to ‘1’ (each byte  
contains FFh). All usable status register bits are 0.  
10  
Maximum rating  
Stressing the device above the rating listed in the Table 16: Absolute maximum ratings may  
cause permanent damage to the device. These are stress ratings only and operation of the  
device at these or any other conditions above those indicated in the operating sections of  
this specification is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect device reliability.  
Table 16. Absolute maximum ratings  
Symbol  
Parameter  
Min  
Max  
Unit  
TSTG  
TLEAD  
VIO  
Storage Temperature  
–65  
150  
See (1)  
VCC + 0.6  
4.0  
°C  
Lead temperature during soldering  
Input and output voltage (with respect to ground)  
Supply voltage  
–0.6  
–0.6  
V
V
V
VCC  
VESD  
Electrostatic discharge voltage (human body model)(2)  
–2000  
2000  
1. Compliant with JEDEC Std J-STD-020C (for small body, SnPb or Pb assembly), the ECOPACK® 7191395  
specification, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.  
2. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 , R2 = 500 ).  
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