Nexperia
PMV52ENE
30 V, N-channel Trench MOSFET
aaa-029815
aaa-029816
-3
-4
-5
-6
15
10
D
V
= 10 V
GS
I
D
(A)
I
(A)
12
4.5 V
min
typ
max
10
9
6
3
0
3.5 V
3.0 V
10
10
2.8 V
2.4 V
0
1
2
3
4
0
1
2
3
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-029817
aaa-029818
400
400
R
DSon
R
DSon
(m
)
(m
)
2.4 V
2.8 V
3.0 V
300
300
200
100
0
200
100
0
3.5 V
4.5 V
T = 175 °C
j
T = 25 °C
j
V
= 10 V
GS
0
1
2
3
4
5
0
2
4
6
8
10
(V)
I
(A)
V
GS
D
Tj = 25 °C
ID = 4 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
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PMV52ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
29 November 2021
7 / 15
NEXPERIA [ Nexperia ]
