Nexperia
PMV52ENE
30 V, N-channel Trench MOSFET
aaa-029929
2
10
I
D
(A)
Limit R
DSon
= V /I
DS
D
t
=
p
10
10 µs
100 µs
1
1 ms
DC; T = 25 °C
sp
10 ms
-1
10
10
2
100 ms
DC; T
= 25 °C; 6 cm
amb
-2
-1
2
10
1
10
10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
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PMV52ENE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
29 November 2021
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