Nexperia
PMV52ENE
30 V, N-channel Trench MOSFET
aaa-029819
aaa-029820
12
2.0
1.5
1.0
0.5
0
a
I
D
(A)
8
4
1
T = 175 °C
j
T = 25 °C
j
0
1
2
3
4
5
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-029821
aaa-029822
3
3
10
C
(pF)
V
max
GS(th)
(V)
C
iss
2
2
1
0
10
typ
C
oss
C
rss
10
min
1
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 250 μA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
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PMV52ENE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
29 November 2021
8 / 15
NEXPERIA [ Nexperia ]
