Nexperia
PMV52ENE
30 V, N-channel Trench MOSFET
aaa-029823
10
V
(V)
V
GS
DS
8
I
D
6
4
2
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
0
0
Q
Q
GS
GD
0.5
1.0
1.5
2.0
Q
2.5
(nC)
G
Q
G(tot)
003aaa508
ID = 3 A; VDS = 15 V; Tamb = 25 °C
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-029824
4
I
S
(A)
3
2
1
0
T = 175 °C
j
T = 25 °C
j
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
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PMV52ENE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
29 November 2021
9 / 15
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